Vim yog qhov tsis tshua muaj ntawm cov moissanite ntuj, feem ntau silicon carbide yog hluavtaws. Nws yog siv ua abrasive, thiab tsis ntev los no ua ib qho semiconductor thiab pob zeb diamond simulant ntawm lub pov haum zoo. Cov txheej txheem tsim khoom yooj yim tshaj plaws yog kev sib xyaw cov xuab zeb silica thiab carbon hauv Acheson graphite hluav taws xob tiv thaiv cua sov ntawm qhov kub siab, ntawm 1,600 ° C (2,910 ° F) thiab 2,500 ° C (4,530 ° F). Cov khoom me me SiO2 hauv cov khoom cog (piv txwv li cov txiv hmab txiv ntoo) tuaj yeem hloov pauv mus rau SiC los ntawm kev ua kom sov hauv cov pa roj carbon ntau dhau los ntawm cov khoom siv organic. Cov silica fume, uas yog cov khoom lag luam ntawm kev tsim cov hlau silicon thiab ferrosilicon alloys, kuj tuaj yeem hloov pauv mus rau SiC los ntawm kev ua kom sov nrog graphite ntawm 1,500 ° C (2,730 ° F).
F12-F1200, P12-P2500
0-1 hli, 1-3 hli, 6/10, 10/18, 200mesh, 325mesh
Lwm cov lus qhia tshwj xeeb tuaj yeem muab rau thaum thov.
| Pob zeb | Sic | FC | Fe2O3 |
| F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
| F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
| F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
| F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
| F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
| F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
| P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
| P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
| P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
| P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
| P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
| P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
| Cov khoom noj txom ncauj | Qhov Ceev Ntau (g/cm3) | Kev Ceev Siab (g/cm3) | Cov khoom noj txom ncauj | Qhov Ceev Ntau (g/cm3) | Kev Ceev Siab (g/cm3) |
| F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
| F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
| F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
| F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
| F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
| F90 | 1.38~1.45 | ≥1.45 |
Yog tias koj muaj lus nug dab tsi. Thov koj xav tiv tauj peb.